Job Description

Req. ID: 192161

Micron Technologys vision is to transform how the world uses information to enrich life and our commitment to people, innovation, tenacity, collaboration, and customer focus allows us to fulfill our mission to be a global leader in memory and storage solutions. This means conducting business with integrity, accountability, and professionalism while supporting our global community.

TCAD Device Engineers at Micron, excel at process and device modeling for Micron's forward-thinking memory technologies. You will be performing detailed process and device design with innovative TCAD tools and will be responsible for semiconductor process & device modeling for Micron's outstanding next-generation memory technologies. You will team with process integration engineers to craft experiments based on modeling and existing experimental results, where applicable. You will engage with diverse teams including process integration, characterization, and circuit design and product engineers to analyze and debug device and circuit-related issues during process development.

Qualifications

Successful candidates for this position will have:

* An excellent understanding of process integration & various process modules, a strong MOSFET device physics background, and familiarity with process fabrication and device simulation using advanced TCAD tools
* Experience conducting TCAD studies on semiconductor device characteristics to craft research and scalable device optimizations
* Experience executing virtual Design of Experiments (DOEs) using the models to supplement process development
* Experience with sophisticated research/thesis work in process modeling or semiconductor fabrication can be substituted for lack of direct experience. Prior hand-on experience in commercial Mechanical Stress modeling and TCAD tools is helpful.
* Experience with CMOS and memory process flow, sub-100nm device physics, mechanical stress, state of the art models used to craft process flows, and predicting device characteristics through numerical simulations
* Knowledge of state-of-the-art memory technologies, specifically for emerging memory, DRAM, 3DNAND cell designs, and advanced CMOS technologies such as high-K metal gate, FinFET, and nano-wire devices.
* Strong communication skills to actively engage and coordinate with diverse global teams to achieve landmark goals as an outstanding teammate

Education:

* M.S. in Electrical Engineering, Material Science Engineering with 2-year semiconductor industry experience
* Ph.D. in Electrical Engineering or Physics
* BS in Electrical Engineer, Material Science Engineering, Physics with 5-year semiconductor industry experience is required.

About Us

As the leader in innovative memory solutions, Micron is helping the world make sense of data by delivering technology that is transforming how the world uses information. Through our global brands - Micron, Crucial and Ballistix - we offer the industry's broadest portfolio. We are the only company manufacturing today's major memory and storage technologies: DRAM, NAND, NOR and 3D XPoint memory. Our solutions are built to push the limits of data to unlock financial insights, accelerate scientific break throughs and improve communication around the world.

Micron Benefits

Employee Rewards Program, Healthcare, Paid time off (Combined Sick and Vacation Time), Retirement savings plans, Paid maternity/paternity leave, Employee Assistance Program, Professional development training, Workplace wellness programs, Micron Health Clinic (Boise only), Fitness Center / Activity rooms (Boise only), Tuition Reimbursement, Micron Corporate Discounts, Casual Dress attire.

All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, veteran or disability status.